US 2010/0144114 A1Published application

Method for Producing a Semiconductor Component with Two Trenches

Assigneeaustriamicroystems AG

InventorsHubert Enichlmair, Martin Schrems, Franz Schrank

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Abstract

A method, in which a first isolating trench, filled with a dielectric material, and a second conducting trench, filled with an electrically conductive material, can be produced. To this end, the first and second trenches are etched with different trench widths, so that the first trench is filled completely with the dielectric material after a deposition of a dielectric layer over the entire surface with the edges covered, whereas the wider second trench is covered by the dielectric layer only on the inside walls. By anisotropic back-etching of the dielectric layer, the semiconductor substrate is exposed at the bottom of the second trench. Subsequently, the second trench is filled with an electrically conductive material and then represents a low-ohmic connection from the substrate surface to the buried structure located below the second trench.

Claims11

Dependent claims

A method for the production of a semiconductor component with a first and a second trench in a substrate that comprises a semiconductor, in which the first trench is filled with a dielectric and in which the second trench is filled with a conductive material to form an electric contact to a buried structure, wherein the method comprises the steps of:

(a) first, producing the two trenches in the semiconductor substrate, the first trench being produced with a width w1, and the second trench with a width w2, with w2>w1;
(b) subsequently, depositing a dielectric over the entire surface and with edge covering, in such a thickness that the first trench is completely filled with the dielectric, but so that the second trench still remains partially opened;
(c) subsequently, etching the dielectric anisotropically until the substrate at the bottom of the second trench is freely exposed;
and
(d) subsequently, depositing an electrically conductive material over the entire surface and with edge covering until the second trench is filled.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/515,224Filed 22 Oct 2007
Priority: DE 10 2006 054 334.317 Nov 2006
Published: 10 Jun 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 20/021
Manufacture or treatment: of interconnections within wafers or substrates
H10P 50/693
For Group IV materials or Group III-V materials: characterised by their size, orientation, disposition, behaviour or shape, in horizontal or…
H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations