Process for production of soi substrate and process for production of semiconductor device

A method of manufacturing a semiconductor device, said method comprising the steps of:

• forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
• adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
• bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
• separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
• forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
• and
• heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
• adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
• bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
• separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is foamed over the second substrate;
• heating the semiconductor layer to stabilize an adhering interface between the first silicon oxide film and the second silicon oxide film;
• forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
• and
• heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
• adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
• bonding the first single crystal semiconductor substrate to a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
• separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
• forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
• heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
• forming a gate insulating film on the single crystal semiconductor island;
• forming a gate electrode comprising polysilicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
• forming silicon oxide on the gate electrode;
• and
• forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode with the silicon oxide interposed therebetween.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
• adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
• bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
• separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
• forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
• heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
• forming a gate insulating film on the single crystal semiconductor island;
• forming a gate electrode comprising polysilicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
• forming silicon oxide on the gate electrode;
• and
• forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode with the silicon oxide interposed therebetween.

A method of manufacturing a semiconductor device, said method comprising the steps of:

• forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
• adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
• bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
• separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
• heating the semiconductor layer to stabilize an adhering interface between the first silicon oxide film and the second silicon oxide film;
• forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
• heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
• forming a gate insulating film on the single crystal semiconductor island;
• forming a gate electrode comprising polysilicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
• forming silicon oxide on the gate electrode;
• and
• forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode with the silicon oxide interposed therebetween.