Semiconductor device and method of manufacturing the same
AssigneeFujitsu Microelectronics Limited
InventorYoichi OKITA
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Abstract
A plurality of origin patterns (3) containing a metal catalyst are formed over a semiconductor substrate (1). Next, an insulating film (4) covering the origin patterns (3) is formed. Next, a trench allowing at the both ends thereof the side faces of the origin patterns (3) to expose is formed. Thereafter, a wiring is formed by allowing carbon nanotubes (5) having a conductive chirality to grow in the trench. Thereafter, an insulating film covering the carbon nanotubes (5) is formed.
Claims17
A method of manufacturing a semiconductor device comprising the steps of:
- forming a plurality of origin patterns containing a metal catalyst over a semiconductor substrate;
- forming an insulating film covering said origin patterns;
- forming, in said insulating film, a trench allowing at both ends thereof side faces of said origin patterns to expose;
- forming a wiring by allowing carbon nanotubes having a conductive chirality to grow in said trench;
- and
- forming an interlayer insulating film covering said carbon nanotubes.
A method of manufacturing a semiconductor device comprising the steps of:
- forming at least two origin patterns containing a metal catalyst over a semiconductor substrate;
- forming an insulating film covering said origin patterns;
- forming, in said insulating film, a trench allowing at both ends thereof side faces of said origin patterns to expose;
- and
- forming a channel by allowing carbon nanotubes having a semiconductive chirality to grow in said trench.
Dependencies are inferred from the claim text.