US 2010/0144103 A1 · Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices

Abstract

Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.

Claims21

Dependent claims

A method for fabricating an electronic device, comprising:

(a) providing a nanowire having a semiconductor inner portion, an insulating shell layer surrounding the core, and a conductive layer surrounding the insulating shell layer;
(b) removing the conductive layer from the nanowire except for a first portion of the conductive layer at least partially encircling the nanowire at a first location along the length of the nanowire and at least a second portion of the conductive layer along a length of the nanowire on a side opposite from the removing;
(c) positioning a dielectric material on the nanowire;
(d) removing the dielectric material and the insulating shell layer from the nanowire at a second location and a third location along the length of the nanowire, wherein the second location and the third location are on opposite respective sides of the first location along the length of the nanowire, wherein at least one of the second location and the third location overlaps with the second portion of the conductive layer along the length of the nanowire;
and
(e) forming a source contact on the second location and a drain contact on the third location.

3 more elements

Dependencies are inferred from the claim text.

Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices

Life of this patent

Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices

Life of this patent

Abstract

Claims21