Method of fabricating oxide semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsNOBUYUKI KAJI, HISATO YABUTA
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Abstract
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
Claims5
1-15. (canceled)
A method for fabricating a device using an oxide semiconductor, the method comprising:
- forming an oxide semiconductor on a substrate;
- and
- changing a conductivity of a predetermined region of the oxide semiconductor by irradiating the predetermined region with an energy ray,
- wherein the changing of the conductivity of the predetermined region is performed to increase the conductivity thereof by irradiating the predetermined region with a particle beam.
The method according to claim 20, wherein
- the device is an oxide-semiconductor channel field-effect transistor, and
- the predetermined region where the conductivity is increased is a source and a drain that is in contact with a channel of the field-effect transistor.
The method according to claim 20, wherein the particle beam used to irradiate the predetermined region to increase the conductivity thereof is an electron beam.
The method according to claim 20, wherein the particle beam used to irradiate the predetermined region to increase the conductivity thereof has a shortest wavelength of 0.15 nm or less.
Dependencies are inferred from the claim text.