Method for forming metal oxide and method for forming transistor structure with the same
AssigneeElectronics and Telecommunications Research Institute
InventorsJiyoung Oh, Jonghyurk Park, Seung Youl Kang, Chul Am Kim, In-Kyu You, Kyoung Ik Cho
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Abstract
Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
Claims13
A method for forming a metal oxide, comprising:
- preparing a metal oxide precursor solution comprising a dopant chemical species;
- preparing an alcohol-based solution comprising a basic chemical species;
- reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant;
- and
- purifying the reactant to form a metal oxide.
A method for forming a transistor structure, comprising:
- preparing a metal oxide precursor solution comprising a dopant chemical species;
- preparing an alcohol-based solution comprising a basic chemical species;
- reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant;
- purifying the reactant to form a metal oxide;
- and
- forming a metal oxide semiconductor layer used as a channel forming layer of a transistor structure on a substrate using the metal oxide.
Dependencies are inferred from the claim text.