Methods of forming phase-changeable memory devices including an adiabatic layer
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Ho Ha, Bong-Jin Kuh, Ji-Hye Yi, Jun-Soo Bae
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Abstract
Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
Claims14
A method of manufacturing a phase-changeable memory device, the method comprising:
- forming a lower electrode on a substrate;
- forming a first phase-changeable material layer on the lower electrode;
- forming a second phase-changeable material layer directly on the first phase-changeable material layer, the second phase-changeable material layer having a melting point higher than that of the first phase-changeable material layer;
- forming a conductive layer on the second phase-changeable material layer;
- and
- partially etching the conductive layer, the second phase-changeable material layer and the first phase-changeable layer to form an upper electrode, a second phase-changeable material layer pattern and a first phase-changeable material layer pattern.
A method of manufacturing a phase-changeable memory device, the method comprising:
- forming a transistor on a substrate, the transistor including a gate structure and first and second impurity regions;
- forming a wiring line on the substrate, the wiring line configured to be electrically connected to the first impurity region;
- forming a lower electrode on the substrate, the lower electrode configured to be electrically connected to the second impurity region;
- forming a preliminary layer structure on the lower electrode, the preliminary layer structure including a first phase-changeable material layer and a second phase-changeable material layer, with the first and second phase-changeable material layers being alternately and repeatedly stacked;
- forming a conductive layer on the preliminary layer structure;
- partially etching the conductive layer and the first and second phase-changeable material layers to form a layer structure on the lower electrode;
- heating a lower portion of the layer structure on the lower electrode that makes contact with the lower electrode to form a third phase-changeable material layer formed from heating of a material in the lower portion of the layer structure on the lower electrode;
- and
- forming an upper electrode on the layer structure on the lower electrode.
Dependencies are inferred from the claim text.