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US 2010/0144064 A1Published application
Semiconductor device having a ferroelectric capacitor
AssigneeFujitsu Microelectronics Limited
InventorsKaoru Saigoh, Kouichi Nagai
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Abstract
An ultra-thin semiconductor chip of an FeRAM, which is miniaturized and highly integrated with characteristic degradation of a ferroelectric capacitor suppressed though a thin package structure is applied to the FeRAM is realized. The semiconductor chip is molded up by using a sealing resin with a filler content set at a value in a range of 90 weight % to 93 weight % to produce a package structure.
Claims11
A manufacturing method of a semiconductor device, comprising:
- a step of forming a semiconductor chip including a memory cell constituted by arranging a plurality of semiconductor elements each including a ferroelectric capacitor structure constituted by sandwiching a ferroelectric film having ferroelectric characteristics with two electrodes;
- and
- a step of sealing the semiconductor chip by using a sealing resin with a filler content of 90 weight % or more to form a thin package structure with a mounting height of 1.27 mm or less.
Dependencies are inferred from the claim text.