High rate deposition of thin films with improved barrier layer properties
AssigneeLotus Applied Technology, LLC
InventorsEric R. Dickey, William A. Barrow
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Abstract
An atomic layer deposition (ALD) method is utilized to deposit a thin film barrier layer of a metal oxide, such as titanium dioxide, onto a substrate. Excellent barrier layer properties can be achieved when the titanium oxide barrier is deposited by ALD at temperatures below approximately 100° C. Barriers less than 100 angstroms thick and having a water vapor transmission rate of less than approximately 0.01 grams/m2/day are disclosed, as are methods of manufacturing such barriers.
Claims33
A vapor barrier deposited onto a substrate, the barrier comprising:
- a thin film of metal oxide less than 150 angstroms thick and having a water vapor transmission rate of less than 0.5 g/m2/day.
A method of depositing a barrier layer onto a substrate, comprising:
- while maintaining the surface temperature of the substrate at less than 100° C., repeating the following steps (a) and (b) in alternating sequence to thereby form a thin film of titanium dioxide on the substrate:
- (a) exposing the substrate to a gaseous first precursor including TiCl4;
- and
- (b) exposing the substrate to a gaseous oxygen-containing second precursor.
A barrier layer made by atomic layer deposition of a titanium dioxide thin film onto a substrate at a temperature of less than 100° C., the barrier layer having a water vapor transmission rate of less than 0.5 g/m2/day.
Dependencies are inferred from the claim text.