Method for forming low-carbon cvd film for filling trenches
AssigneeASM Japan K.K.
InventorsAtsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa
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Abstract
A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
Claims20
A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches, comprising:
- introducing a process gas into a reaction chamber, said process gas comprising a gas of a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.;
- applying RF power to the process gas;
- and
- depositing a film on a substrate having trenches wherein the substrate is maintained at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with a material constituting the film.
Dependencies are inferred from the claim text.