Method and apparatus for manufacturing epitaxial silicon wafer
AssigneeSumco Techxiv Corporation
InventorKazuhiro NARAHARA
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Abstract
A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.
Claims13
A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor, comprising the steps of:
- growing the epitaxial layer;
- and
- cooling the epitaxial wafer having the epitaxial layer,
- wherein the step of cooling comprises:
- a wafer measurement step of measuring a temperature of the epitaxial wafer;
- a susceptor measurement step of measuring a temperature of the susceptor;
- and
- a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.
A susceptor utilized in an epitaxial wafer manufacturing apparatus capable of growing an epitaxial layer over a main surface of a silicon wafer arranged substantially horizontally, comprising:
- a size and a shape capable of covering a back surface of the epitaxial wafer placed on the susceptor;
- and
- heat capacity adjusted so that the susceptor has a predetermined thermal relationship with the epitaxial wafer when the epitaxial wafer is at so high temperature that the dislocation may be generated.
Dependencies are inferred from the claim text.