Absorption modulator and manufacturing method thereof
AssigneeElectronics and Telecommunications Research Institute
InventorsJeong Woo PARK, Jongbum You, Gyungock Kim
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Abstract
An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
Claims18
An absorption modulator comprising:
- a substrate;
- an insulation layer disposed on the substrate;
- and
- a waveguide having a P-I-N diode structure on the insulation layer, wherein absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide.
A method for manufacturing an absorption modulator, comprising:
- forming a rib waveguide in a wafer, the wafer comprising a substrate, an insulation layer formed on the substrate, and a semiconductor layer formed on the insulation layer;
- performing an impurity doping on the rib waveguide;
- and
- varying absorptance of the rib waveguide,
- wherein the rib waveguide comprises a central protrusion portion, and slaves formed on both ends of the protrusion portion.
Dependencies are inferred from the claim text.