(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
AssigneeThe Regents of the University of California
InventorsDaniel A. Cohen, Steven P. DenBaars, Shuji Nakamura
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Abstract
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
Claims23
An (Al,Ga,In)N based diode laser comprising:
- (a) an (Al,Ga,In)N laser core for generating and confining light having a laser wavelength;
- and
- (b) at least one transparent and electrically conducting layer deposited on the laser core to provide electrical contact to the laser core, wherein the transparent and electrically conducting layer:
- (i) has a refractive index lower than an effective refractive index of the laser core,
- (ii) is deposited by a method other than crystal growth at a temperature above 550° C.,
- (iii) has a bulk resistivity below 10 Ohm-cm and is capable of making an electrical contact to the laser core with a specific contact resistance below 0.01 Ohm-cm2, and
- (iv) has an optical absorption coefficient below 2000 cm−1 measured at the laser wavelength.
The (Al,Ga,In)N based diode laser of claim 10, wherein the transparent and electrically conducting layer is patterned in a plane of the transparent and electrically conducting layer to form a rib or ridge, to serve as a lateral waveguide core.
A method of fabricating an (Al,Ga,In)N based diode laser comprising:
- depositing at least one transparent and electrically conducting layer on a laser core of the diode laser, wherein the transparent and electrically conducting layer:
- (i) has a refractive index lower than an effective refractive index of the laser core,
- (ii) provides electrical contact to the laser core, has a bulk resistivity below 10 Ohm-cm and makes an electrical contact to the laser core with a specific contact resistance below 0.01 Ohm-cm2,
- (iii) has an optical absorption coefficient below 2000 cm−1 measured at the laser wavelength, and
- (iv) is deposited by a method of deposition that does not require a temperature greater than 550° C.
Dependencies are inferred from the claim text.