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US 2010/0142295 A1Published application
Semiconductor memory device and driving method thereof
AssigneeHynix Semiconductor Inc.
InventorJu-Young SEO
Life of this patent
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Abstract
A semiconductor memory device includes a source signal generator configured to generate a source signal having a predetermined pulse width in response to a command signal, and a column selection signal generator configured to generate a column selection signal by controlling a pulse width of the source signal according to a voltage level of an external supply voltage.
Claims17
A semiconductor memory device comprising:
- a source signal generator configured to generate a source signal having a predetermined pulse width in response to a command signal;
- and
- a column selection signal generator configured to generate a column selection signal by controlling the pulse width of the source signal according to a voltage level of an external supply voltage.
A semiconductor memory device comprising:
- a column selection signal generator configured to generate a column selection signal having a pulse width corresponding to a voltage level of an external supply voltage in response to a command signal;
- and
- a column selector configured to connect a first data line connected to a memory cell to a second data line for a time corresponding to a pulse width of the column selection signal.
Dependencies are inferred from the claim text.