Method of programming flash memory device
AssigneeHynix Semiconductor Inc.
InventorsYou Sung KIM, Duck Ju KIM
Life of this patent
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Abstract
A method of programming data in a flash memory device is disclosed. The memory device includes a memory cell array which in turn includes at least one block, and the block in turn includes a plurality of pages. A program command to program a plurality of pages in the block is received. The plurality of pages is programmed in a predefined order. An address corresponding to a page that was programmed last amongst the plurality of pages is stored.
Claims2
A method of programming data in a flash memory device having a memory cell array including at least one block, the block including a plurality of pages, the method comprising:
- receiving a program command to program a plurality of pages in the block;
- programming the plurality of pages in a predefined order;
- and
- storing an address corresponding to a page that was programmed last amongst the plurality of pages.
Dependencies are inferred from the claim text.