Programming memory devices
AssigneeMicron Technology, Inc.
InventorsDzung H. Nguyen, Benjamin Louie, Hagop A. Nazarian, Aaron Yip, Jin-Man Han
Life of this patent
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Abstract
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
Claims20
A method of programming a target memory cell of a NAND string of memory cells, comprising the step of:
- applying a programming voltage, substantially equal to a programmed initial programming voltage, to the target memory cell, the initial programming voltage being programmed into a memory device that includes the NAND string after fabrication of the memory device.
A method of programming a target memory cell of a NAND string of memory cells, comprising the steps of:
- applying a programming voltage to the target memory cell;
- determining whether the target memory cell is programmed;
- and
- increasing the programming voltage by a programmed step voltage, programmed into the memory device after fabrication of the memory device, if it is determined that the target memory cell is not programmed.
A method of programming a target memory cell of a NAND string of memory cells, comprising:
- applying a programming voltage, substantially equal to a programmed initial programming voltage, to the target memory cell;
- and
- applying a first potential to a source line selectively coupled, by a select gate, to the NAND string of memory cells that includes the target memory cell,
- wherein the initial programming voltage is programmed into a memory device that includes the NAND string of memory cells after fabrication of the memory device.
Dependencies are inferred from the claim text.