Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory

A magnetic memory cell comprising:

• a magnetic recording layer that is a ferromagnetic layer;
• and
• a pinned layer connected to said magnetic recording layer through a non-magnetic layer,
• wherein said magnetic recording layer includes:
• a magnetization switching region having reversible magnetization and facing said pinned layer;
• a first magnetization fixed region connected to a first boundary of said magnetization switching region and whose magnetization direction is fixed to a first direction;
• and
• a second magnetization fixed region connected to a second boundary of said magnetization switching region and whose magnetization direction is fixed to a second direction,
• wherein said magnetization switching region, said first magnetization fixed region and said second magnetization fixed region are linearly formed in a same plane,
• wherein said first direction is opposite to said second direction,
• wherein magnetization direction of said magnetization switching region is toward any of said first boundary and said second boundary, and a domain wall is formed at any of said first boundary and said second boundary in said magnetic recording layer,
• wherein a cross-sectional area of said magnetization switching region increases with distance from said first boundary and said second boundary.

A magnetic random access memory comprising:

• a magnetic memory cell;
• a word line connected to said magnetic memory cell;
• and
• a bit line connected to said magnetic memory cell,
• wherein said magnetic memory cell comprises:
• a magnetic recording layer that is a ferromagnetic layer;
• and
• a pinned layer connected to said magnetic recording layer through a non-magnetic layer,
• wherein said magnetic recording layer includes:
• a magnetization switching region having reversible magnetization and facing said pinned layer;
• a first magnetization fixed region connected to a first boundary of said magnetization switching region and whose magnetization direction is fixed to a first direction;
• and
• a second magnetization fixed region connected to a second boundary of said magnetization switching region and whose magnetization direction is fixed to a second direction,
• wherein said first magnetization fixed region and said second magnetization fixed region are formed parallel to each other,
• wherein said first direction and said second direction are the same direction,
• wherein magnetization direction of said magnetization switching region is toward any of said first boundary and said second boundary, and a domain wall is formed at any of said first boundary and said second boundary in said magnetic recording layer.

A data read and write method for a magnetic random access memory having a magnetic memory cell,

• said magnetic memory cell comprising:
• a magnetic recording layer that is a ferromagnetic layer;
• and
• a pinned layer connected to said magnetic recording layer through a non-magnetic layer,
• wherein said magnetic recording layer includes:
• a magnetization switching region facing said pinned layer, in which a domain wall moves;
• a first magnetization fixed region connected to a first boundary of said magnetization switching region and whose magnetization direction is fixed to a first direction;
• and
• a second magnetization fixed region connected to a second boundary of said magnetization switching region and whose magnetization direction is fixed to a second direction,
• wherein said first magnetization fixed region and said second magnetization fixed region are formed parallel to each other,
• wherein said first direction and said second direction are the same direction,
• wherein magnetization direction of said magnetization switching region is toward any of said first boundary and said second boundary, and a domain wall is formed at any of said first boundary and said second boundary in said magnetic recording layer,
• said data read and write method comprising:
• (A) moving said domain wall to said first boundary by supplying a first write current from said first magnetization fixed region to said second magnetization fixed region, when writing a first data;
• and
• (B) moving said domain wall to said second boundary by supplying a second write current from said second magnetization fixed region to said first magnetization fixed region, when writing a second data.

A magnetic memory cell comprising:

• a magnetic recording layer that is a ferromagnetic layer;
• a pinned layer connected to said magnetic recording layer through a non-magnetic layer;
• and
• an assist wiring,
• wherein said magnetic recording layer includes:
• a magnetization switching region having reversible magnetization and facing said pinned layer;
• a first magnetization fixed region connected to a first boundary of said magnetization switching region and whose magnetization direction is fixed to a first direction;
• and
• a second magnetization fixed region connected to a second boundary of said magnetization switching region and whose magnetization direction is fixed to a second direction,
• wherein said first magnetization fixed region and said second magnetization fixed region are formed parallel to each other,
• wherein said assist wiring is so formed as to intersect with said magnetization switching region,
• wherein in a first write operation, a direction of a magnetic field applied to said magnetization switching region due to a current flowing through said assist wiring is toward one of said first boundary and said second boundary,
• wherein in a second write operation, a direction of a magnetic field applied to said magnetization switching region due to a current flowing through said assist wiring is toward the other of said first boundary and said second boundary.