Data Integrity Preservation In Spin Transfer Torque Magnetoresistive Random Access Memory
AssigneeQUALCOMM Incorporated
InventorsSei Seung Yoon, Seung H. Kang
Life of this patent
Estimating the term…
Abstract
Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. A write-back circuit configured to detect a read value of the bit cell and is configured to write back the read value to the bit cell after a read operation.
Claims20
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM), comprising:
- a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor, wherein the bit cell is coupled to a bit line and a source line;
- a word line driver coupled to a gate of the word line transistor;
- and
- a write-back circuit configured to detect a read value of the bit cell and configured to write back the read value to the bit cell after a read operation.
A method for read and write operations in a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) device, the method comprising:
- reading data stored in a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor, wherein the bit cell is coupled to a bit line and a source line;
- detecting a read value of the bit cell;
- and
- writing back the detected read value to the bit cell using a word line driver coupled to a gate of the word line transistor.
A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM), comprising:
- means for reading data stored in a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor, wherein the bit cell is coupled to a bit line and a source line;
- means for detecting a read value of the bit cell;
- and
- means for writing back the detected read value to the bit cell using a word line driver coupled to a gate of the word line transistor.
Dependencies are inferred from the claim text.