Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element

A method of programming a nonvolatile memory cell array, the nonvolatile memory cell array comprising a plurality of X lines, a plurality of Y lines, and a plurality of memory cells, each memory cell comprising a diode steering element in series with a carbon storage element and each memory cell electrically connected between one of the plurality of X lines and one of the plurality of Y lines, the method comprising:

• driving a selected X line of the plurality of X lines associated with at least one selected memory cell of the plurality of memory cells to a X line select voltage;
• driving at least one selected Y line of the plurality of Y lines associated with the at least one selected memory cell to a Y line select voltage;
• wherein the X line select voltage and the Y line select voltage are configured such that a diode steering element of the at least one selected memory cell is reverse biased;
• isolating the at least one selected Y line of the plurality of Y lines before a carbon storage element of the at least one selected memory cell is completely set to a lower resistivity state;
• and
• holding the at least one selected Y line in an isolated state until the carbon storage element of the at least one selected memory cell is completely set to the lower resistivity state.

A method of programming a nonvolatile memory cell, comprising:

• sensing a temperature of at least one memory cell or a chip comprising the at least one memory cell, the at least one memory cell comprising a steering element and a storage element;
• selecting a setting voltage based on the sensed temperature;
• and
• providing the setting voltage to the at least one memory cell, such that the steering element is reverse biased and the storage element is set to a lower resistivity state.