Semiconductor device
AssigneeSony Corporation
InventorMakoto Kitagawa
Life of this patent
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Abstract
A semiconductor device includes: a memory cell array having a plurality of memory cells arranged in arrays; a plurality of bit lines formed correspondingly to a column arrangement of the memory cells; a plurality of word lines formed correspondingly to a row arrangement of the memory cells; a plate line having one of a configuration in which the first electrodes of the respective memory cells are included in the plate line and a configuration in which the first electrodes are connected to the plate line; a column switch used to connect a selected bit line and a data access line; and a pre-charge portion that performs a pre-charge operation to pre-charge a non-selected bit line not selected by the column switch to potential of the plate line.
Claims7
A semiconductor device comprising:
- a memory cell array having a plurality of memory cells arranged in arrays;
- a plurality of bit lines formed correspondingly to a column arrangement of the memory cells;
- a plurality of word lines formed correspondingly to a row arrangement of the memory cells;
- a plate line having one of a configuration in which the first electrodes of the respective memory cells are included in the plate line and a configuration in which the first electrodes are connected to the plate line;
- a column switch used to connect a selected bit line and a data access line;
- and
- a pre-charge portion that performs a pre-charge operation to pre-charge a non-selected bit line not selected by the column switch to potential of the plate line,
- wherein each memory cell includes
- a memory element including a memory layer sandwiched between a first electrode and a second electrode and having a resistance value that varies with an application of a voltage between the first electrode having one of a configuration to be included in the plate line and a configuration to be connected to the plate line and the second electrode, and
- an access transistor connected between the second electrode and one of the bit lines provided in a corresponding column and having a gate connected to one of the word lines provided in a corresponding row.
Dependencies are inferred from the claim text.