Buried capacitor, method of manufacturing the same, and method of changing capacitance thereof
AssigneeElectronics and Telecommunications Research Institute
InventorsHyun-Cheol Bae, Kwang-Seong Choi, Ju Yeon Hong, Jong Tae Moon, Yong il Jun
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Abstract
Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.
Claims16
A buried capacitor comprising:
- an upper electrode including at least one first hole;
- a lower electrode including at least one second hole;
- and
- a dielectric interposed between the upper electrode and the lower electrode.
A method of changing a capacitance of a buried capacitor, the buried capacitor including an upper electrode, a lower electrode, and a dielectric, the upper and lower electrodes having predetermined horizontal and vertical lengths and facing each other, the dielectric being interposed between the upper and lower electrodes, the method comprising:
- disposing at least one first hole in the upper electrode;
- and
- disposing at least one second hole in the lower electrode.
A method of manufacturing a buried capacitor, the method comprising:
- forming an upper electrode on an upper insulation layer, the upper electrode including at least one first hole;
- forming a lower electrode on a lower insulation layer, the lower electrode including at least one second hole;
- laminating the upper insulation layer on the lower insulation layer;
- and
- performing a cofiring process to thermally melt and bond the upper insulation layer and the lower insulation layer.
Dependencies are inferred from the claim text.