Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO

A magnetoresistive (MR) effect element, comprising:

• a pair of magnetic layers and a nonmagnetic intermediate layer that includes a ZnO film and that is sandwiched by the pair of the magnetic layers, wherein
• a relative angle of magnetization direction of the pair of the magnetic layers varies because at least the magnetization direction of one of the pair of magnetic layers varies according to the external magnetic field,
• the ZnO film is configured so that its c-axis is angled with respect to a direction perpendicular to a surface of the ZnO film.

A method of forming a ZnO film, comprising:

• step for arranging a first target of ZnO, a second target of Zn, and a deposition object having a deposition surface, wherein the first and second targets are arranged to face the deposition surface in a depressurized chamber;
• step for introducing a mix gas of oxygen gas and argon gas into the depressurized chamber;
• step for depositing a ZnO film on the deposition surface by applying each of first and second direct current (DC) application power to spaces between the first and second targets and the deposition object respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the deposition object is set at positive potential.