Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same

A semiconductor image sensor module comprising:

• a semiconductor image sensor chip having a transistor region formed at a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed at a second main surface on the side opposite to the first main surface side and
• an image signal processing chip,
• wherein a plurality of bump electrodes are formed on the first main surface of said semiconductor image sensor chip,
• a plurality of bump electrodes are formed on said image signal processing chip,
• heat dissipating means is formed between said semiconductor image sensor chip and said image signal processing chip and
• the plurality of bump electrodes of said semiconductor image sensor chip and the corresponding ones plurality of bump electrodes on said image signal processing chip are electrically connected.

A method for manufacturing a semiconductor image sensor module, comprising the steps of

• forming a plurality of bump electrodes at a first main surface of a semiconductor image sensor chip in which a transistor region is formed at a first main surface of a semiconductor substrate and a photoelectric conversion region having a light incident surface is formed at a second main surface which is the side opposite to said first main surface,
• forming a plurality of bump electrodes on an image signal processing chip for processing image signals,
• forming a heat dissipating means between said semiconductor image sensor chip and said image signal processing chip and
• connecting the plurality of said semiconductor image sensor chip to corresponding ones the plurality of bump electrodes on said image signal processing chip.

A camera comprising:

• a semiconductor image sensor chip having a transistor forming region formed on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface side and an image signal processing chip,
• wherein a plurality of bump electrodes are formed at the first main surface of said semiconductor image sensor chip,
• a plurality of bump electrodes are formed on said image signal processing chip,
• heat dissipating means is formed between said semiconductor image sensor chip and corresponding ones the plurality of bump electrodes on said image signal processing chip are electrically connected;
• and
• a lens provided at said second main surface side of said semiconductor image sensor module.