Internal voltage generator of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSang-Jin BYEON
Life of this patent
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Abstract
An internal voltage generator of a semiconductor device includes a charge pumping unit for performing a charge pumping operation on the basis of the voltage level of a reference voltage to generate a charge pumped voltage having a voltage level higher than the external power supply voltage; and an internal voltage generating unit for performing a charge pumping operation on the basis of an internal voltage level that is linear with respect to a temperature change in a first temperature range to generate an internal voltage, and to perform a charge pumping operation on the basis of an internal voltage clamping level that is constant independent of a temperature change in a second temperature range to generate the internal voltage.
Claims28
An internal voltage generator of a semiconductor device, comprising:
- a charge pumping unit configured to receive an external power supply voltage, to perform a charge pumping operation on the basis of the voltage level of a reference voltage and to generate a charge-pumped voltage having a voltage level higher than the external power supply voltage;
- and
- an internal voltage generating unit configured to receive the charge-pumped voltage, to perform a charge pumping operation on the basis of an internal voltage level that is linear to a temperature change in a first temperature range to generate an internal voltage, and to perform a charge pumping operation on the basis of an internal voltage clamping level that is constant independent of a temperature change in a second temperature range to generate the internal voltage.
An internal voltage generator of a semiconductor device, comprising:
- a charge pumping unit configured to receive an external power supply voltage, to perform a charge pumping operation on the basis of the voltage level of a reference voltage and to generate a charge pumped voltage having a voltage level higher than the external power supply voltage;
- and
- an internal voltage generating unit configured to receive the charge pumped voltage to perform a charge pumping operation on the basis of an internal voltage level linear to a temperature change in a first temperature range to generate an internal voltage, to perform a charge pumping operation on the basis of an internal voltage lowest clamping level that is constant independent of a temperature change in a second temperature range lower than the first temperature range to generate the internal voltage, and to perform a charge pumping operation on the basis of an internal voltage highest clamping level that is constant independent of a temperature change in a third temperature range higher than the first temperature range to generate the internal voltage.
An internal voltage generator of a semiconductor device, comprising:
- a charge pumping unit configured to receive an external power supply voltage to perform a charge pumping operation on the basis of the voltage level of a reference voltage to generate a charge pumped voltage having a voltage level higher than the external power supply voltage;
- and
- an internal voltage generating unit configured to receive the charge pumped voltage to perform a charge pumping operation on the basis of an internal voltage level that is linear with respect to a temperature change in a first temperature range in a first operation mode selectable according to a test signal and a fuse option to generate an internal voltage, to perform a charge pumping operation on the basis of an internal voltage lowest clamping level that is constant independent of a temperature change in a second temperature range lower than the first temperature range to generate the internal voltage, to perform a charge pumping operation on the basis of an internal voltage highest clamping level that is constant independent of a temperature change in a third temperature range higher than the first temperature range to generate the internal voltage, and to perform a charge pumping operation on the basis of an internal voltage target level that is constant independent of the temperature change in all of the first to third temperature ranges in a second operation mode selectable according to the test signal and the fuse option to generate the internal voltage, the internal voltage target level being higher than the constant internal voltage lowest clamping level and lower than the constant internal voltage highest clamping level.
Dependencies are inferred from the claim text.