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US 2010/0141099 A1Published application
Piezoelectric thin film element
AssigneeHitachi Cable, Ltd.
InventorsKazufumi Suenaga, Kenji Shibata, Fumihito Oka, Hideki Sato
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Abstract
A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0<z<0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
Claims8
A piezoelectric thin film element, comprising a bottom electrode, a piezoelectric layer and a top electrode on a substrate,
- wherein the piezoelectric layer comprises as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦y≦1, 0≦z≦0.2, x+y+z=1), and
- the bottom electrode comprises a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
Dependencies are inferred from the claim text.