Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

A multilayer wiring board, comprising:

• a substrate;
• and
• a multilayer wiring structure which comprises a plurality of wiring layers disposed above the substrate, and an insulating film,
• wherein the wiring layers are electrically connected to each other, and the insulating film is a silicon-containing insulating film formed by using an insulating film material and exposed to a single ray or mixed rays of light, and
• wherein the insulating film material comprises:
• a silane compound;
• and
• a polycarbosilane compound expressed by the following structural formula 1,
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A multilayer wiring board, comprising:

• a substrate;
• and
• a multilayer wiring structure which comprises a plurality of wiring layers disposed above the substrate;
• and an interlayer insulating film disposed between the wiring layers,
• wherein the wiring layers are electrically connected to each other through a through hole piercing through the interlayer insulating film, and the interlayer insulating film is formed by using an insulating film material, and
• wherein the insulating film material comprises:
• a polycarbosilane compound expressed by the following structural formula 1,
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A multilayer wiring board, comprising:

• a substrate;
• and
• a multilayer wiring structure which comprises a plurality of wiring layers disposed above the substrate, an interlayer insulating film disposed between the wiring layers, and either or both of an etching stopper film and a chemical mechanical polishing stopper film formed on the interlayer insulating film by using an insulating film material,
• wherein the wiring layers are electrically connected to each other through a through hole piercing through the interlayer insulating film, and
• wherein the insulating film material comprises:
• a polycarbosilane compound expressed by the following structural formula 1,
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A method for producing a multilayer wiring board, comprising:

• forming an interlayer insulating film on a processing surface by using an insulating film material;
• and
• etching the interlayer insulating film so as to form a wiring pattern;
• and
• forming a wiring layer using the wiring pattern,
• wherein the forming the interlayer insulating film, the etching the interlayer insulating film, and the forming the wiring layer are repeated, and
• wherein the insulating film material comprises:
• a polycarbosilane compound expressed by the following structural formula 1,
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A semiconductor device, comprising:

• a transistor;
• a semiconductor substrate having the transistor on a surface thereof;
• a multilayer wiring structure disposed on the semiconductor substrate;
• and
• an electrode pad disposed on an uppermost layer of the multilayer wiring structure,
• wherein the multilayer wiring structure comprises a plurality of wiring layers disposed above the semiconductor substrate, and an interlayer insulating film disposed between the wiring layers,
• wherein the wiring layers are electrically connected to each other through a through hole piercing through the interlayer insulating film, and the transistor and the electrode pad are electrically connected through the multilayer wiring structure, and
• wherein the interlayer insulating film is formed by using an insulating film material comprising a polycarbosilane compound expressed by the following structural formula 1:
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A semiconductor device, comprising:

• a transistor;
• a semiconductor substrate on a surface of which the transistor is disposed;
• a multilayer wiring structure disposed on the semiconductor substrate;
• and
• an electrode pad disposed on an uppermost layer of the multilayer wiring structure,
• wherein the multilayer wiring structure comprises a plurality of wiring layers disposed above the semiconductor substrate, an interlayer insulating film disposed between the wiring layers and either or both of an etching stopper film and a chemical mechanical polishing stopper film formed on the interlayer insulating film by using an insulating film material,
• wherein the wiring layers are electrically connected to each other through a through hole piercing through the interlayer insulating film, and the transistor and the electrode pad are electrically connected through the multilayer wiring structure, and
• wherein the insulating film material comprises a polycarbosilane compound expressed by the following structural formula 1:
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.

A method for producing a semiconductor device, comprising forming a transistor on a surface of a semiconductor substrate;

• repeating, so as to form a multilayer wiring structure, a) forming an interlayer insulating film on a processing surface by using an insulating film material, b) etching the interlayer insulating film so as to form a wiring pattern, and c) forming a wiring layer using the wiring pattern;
• and
• forming an electrode pad on the uppermost layer of the multilayer wiring structure,
• wherein the insulating film material comprises a polycarbosilane compound expressed by the following structural formula 1:
• where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon;
• n is an integer of 5 to 5,000.