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US 2010/0140806 A1Published application
Method for Forming Super Contact in Semiconductor Device
OwnerSang Chul KIMinventor
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Abstract
A method for forming a super contact in a semiconductor device is disclosed. The method enables forming a barrier film selectively on the silicon substrate, leaving the metal contact exposed for perfect isolation of the metal pad from the silicon substrate after formation of the super contact.
Claims17
A method of forming a contact, comprising:
- forming a metal contact in a silicon substrate, the metal contact projecting from a surface of the silicon substrate;
- forming a thermal oxide film on the surface of the silicon substrate, leaving the metal contact exposed;
- and
- forming a metal pad electrically connected to the metal contact on or over an upper surface of the metal contact and an upper surface of the thermal oxide film adjacent to the metal contact.
1 more element
A semiconductor device comprising:
- a metal contact in a silicon substrate, the metal contact projecting from a surface of the silicon substrate;
- a thermal oxide film on the surface of the silicon substrate, through which the metal contact is exposed;
- and
- a metal pad electrically connected to the metal contact, on or over an upper surface of the metal contact and an upper surface of the thermal oxide film adjacent to the metal contact.
1 more element
The semiconductor device as claimed in claim.
Dependencies are inferred from the claim text.