Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
AssigneeIbiden Co., Ltd.
InventorsHajime SAKAMOTO, Dongdong WANG
Life of this patent
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Abstract
A method of manufacturing a semiconductor device having a transition layer, including (a) forming a wiring and a die pad on a wafer, (b) forming a thin film layer on an entire surface of the wafer obtained in the step (a), (c) forming a resist layer on the thin film layer, and forming a thickening layer on a resist layer unformed section, (d) peeling the resist layer, (e) removing the thin film layer by etching, and (f) dividing the wafer to thereby form semiconductor devices.
Claims18
A method of manufacturing a semiconductor device having a transition layer, comprising:
- (a) forming a wiring and a die pad on a wafer;
- (b) forming a thin film layer on an entire surface of the wafer obtained in said step (a);
- (c) forming a resist layer on said thin film layer, and forming a thickening layer on a resist layer unformed section;
- (d) peeling the resist layer;
- (e) removing the thin film layer by etching;
- and
- (f) dividing said wafer to thereby form semiconductor devices.
A method of manufacturing a semiconductor device having a transition layer, comprising:
- (a) forming a wiring and a die pad on a wafer;
- (b) forming a first thin film layer and a second thin film layer on an entire surface of the wafer obtained in said step (a);
- (c) forming a resist layer on said thin film layers, and forming a thickening layer on a resist layer unformed section;
- (d) peeling the resist layer;
- (e) removing said first and second thin film layers by etching;
- and
- (f) dividing said wafer to thereby form semiconductor devices.
A method of manufacturing a semiconductor device having a transition layer, comprising:
- (a) forming a wiring and a die pad on a wafer;
- (b) forming a thin film layer on an entire surface of the wafer obtained in said step (a);
- (c) forming a thickening layer on an entire surface of said thin film layer, and forming a resist on the thickening layer;
- (d) removing the thickening layer on a resist unformed section by etching;
- (e) peeling the resist layer;
- and
- (f) dividing said wafer to thereby form semiconductor devices.
A method of manufacturing a semiconductor device having a transition layer, comprising:
- (a) forming a wiring and a die pad on a wafer;
- (b) forming a first thin film layer and a second thin film layer on an entire surface of the wafer obtained in said step (a);
- (c) forming a thickening layer on an entire surface of said thin film layers, and forming a resist on the thickening layer;
- (d) removing the first and second thin film layers and the thickening layer on a resist unformed section by etching;
- (e) peeling a resist layer;
- and
- (f) dividing said wafer to thereby form semiconductor devices.
Dependencies are inferred from the claim text.