Film forming method and film forming apparatus
AssigneesTokyo Electron Limited, Tohoku University
InventorsKenji MATSUMOTO, Hitoshi ITOH, Koji NEISHI, Junichi KOIKE
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Abstract
On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.
Claims22
A film forming method, comprising forming a thin film of manganese oxide (MnO) on a surface of an object to be treated by a heat treatment by using an organic metal-containing source gas containing manganese (Mn) and H2O (water vapor) in a vacuum-evacuable processing chamber.
A film forming method, comprising forming a thin film of CuMn alloy on a surface of an object to be treated by a heat treatment by using an organic metal-containing source gas containing manganese (Mn), a copper-containing source gas and H2O (water vapor) in a vacuum-evacuable processing chamber.
Dependencies are inferred from the claim text.