US 2010/0140799 A1 · Extended Redistribution Layers Bumped Wafer

Abstract

A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

Claims25

Dependent claims

A semiconductor device, comprising:

a semiconductor die;
a plurality of bond pads formed over a surface of the semiconductor die;
an organic material disposed around a peripheral region of the semiconductor die, wherein a top surface of the organic material is substantially coplanar with a top surface of the semiconductor die;
a plurality of first under bump metallization (UBM) formed over the organic material;
and
a conductive layer formed over the organic material and electrically connected between one of the first UBM and one of the bond pads.

3 more elements

Dependencies are inferred from the claim text.

Extended Redistribution Layers Bumped Wafer

Life of this patent

Extended Redistribution Layers Bumped Wafer

Life of this patent

Abstract

Claims25