Semiconductor Device and Method of Forming Conductive Pillars in Recessed Region of Peripheral Area Around the Device for Electrical Interconnection to Other Devices

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer having a plurality of semiconductor die with a peripheral area around the semiconductor die;
• forming a first insulating layer over the semiconductor wafer;
• forming a recessed region in the peripheral area;
• forming a first conductive layer over the first insulating layer outside the recessed region and further into the recessed region, the first conductive layer being electrically connected to a contact pad on the semiconductor die;
• forming a conductive pillar over the first conductive layer within the recessed region;
• forming a second insulating layer over the conductive pillar and first conductive layer;
• and
• singulating the semiconductor wafer through the peripheral area to separate the semiconductor die.

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer having a plurality of semiconductor die with a peripheral area around the semiconductor die;
• forming a recessed region in the peripheral area;
• forming a conductive layer in the recessed region;
• forming a conductive pillar over the conductive layer within the recessed region;
• forming an insulating layer over the conductive pillar and conductive layer;
• and
• singulating the semiconductor wafer through the peripheral area to separate the semiconductor die.

A semiconductor device, comprising:

• a semiconductor die having a peripheral area;
• a first insulating layer formed over the semiconductor die;
• a recessed region formed in the peripheral area;
• a conductive layer formed over the first insulating layer outside the recessed region and further into the recessed region;
• a conductive pillar formed over the conductive layer within the recessed region;
• and
• a second insulating layer formed over the conductive pillar and conductive layer.