Semiconductor Device and Method of Forming an IPD Beneath a Semiconductor Die with Direct Connection to External Devices

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a conductive layer on the substrate, the conductive layer having a first portion constituting contact pads and a second portion constituting an integrated passive device;
• forming a spacer on the substrate around the second portion of the conductive layer;
• mounting a semiconductor die to the spacer;
• forming an electrical connection between contact pads on the semiconductor die and the contact pads on the substrate;
• forming an encapsulant around the semiconductor die, electrical connections, and conductive layer;
• and
• removing the substrate to expose the conductive layer.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a conductive layer on the substrate, the conductive layer including an integrated passive device;
• forming a spacer on the substrate around the conductive layer;
• mounting a semiconductor die to the spacer;
• forming an encapsulant around the semiconductor die and conductive layer;
• and
• removing the substrate to expose the conductive layer.

A semiconductor device, comprising:

• a spacer;
• a semiconductor die mounted over the spacer;
• a conductive layer formed below the spacer, the conductive layer including an integrated passive device which is exposed from the semiconductor device;
• and
• an encapsulant formed around the semiconductor die and conductive layer.