Semiconductor Package with Semiconductor Core Structure and Method of Forming Same

A method of making a semiconductor device, comprising:

• providing a temporary carrier for supporting the semiconductor device;
• forming an integrated passive device (IPD) structure over the temporary carrier;
• mounting a first semiconductor die to the IPD structure with a flipchip interconnect;
• forming conductive posts over the temporary carrier;
• bonding a core structure to the conductive posts and first semiconductor die, the core structure including a silicon material and conductive TSVs;
• and
• mounting a second semiconductor die over the semiconductor device, the second semiconductor die being electrically connected to the core structure.

A method of making a semiconductor device, comprising:

• forming an integrated passive device (IPD) structure;
• forming conductive posts around the IPD structure;
• and
• bonding a core structure to the conductive posts, the core structure including a silicon material and conductive TSVs.

A semiconductor device, comprising:

• an integrated passive device (IPD) structure;
• a first semiconductor die mounted to the IPD structure;
• a plurality of first conductive posts formed around the IPD structure;
• a core structure bonded over the conductive posts and first semiconductor die, the core structure including a semiconductor material and conductive TSVs;
• and
• a second semiconductor die mounted over the semiconductor device, the second semiconductor die being electrically connected to the core structure.