Semiconductor Device and Method of Forming Vertical Interconnect Structure in Substrate for IPD and Baseband Circuit Separated by High-Resistivity Molding Compound

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a conductive via through a top-side of the substrate, the conductive via extending vertically through less than a thickness of the substrate;
• forming a first integrated passive device (IPD) over the substrate;
• forming a plurality of first conductive pillars over the first IPD;
• mounting a first semiconductor die over the substrate;
• forming a first encapsulant around the first conductive pillars and first semiconductor die;
• and
• removing a portion of a back-side of the substrate, opposite the top-side of the substrate, to expose the first conductive via.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a conductive via through a top-side of the substrate, the conductive via extending vertically through less than a thickness of the substrate;
• forming a first integrated passive device (IPD) over the substrate;
• forming a plurality of first conductive pillars over the first IPD;
• mounting a first semiconductor die over the substrate;
• forming a first encapsulant around the first conductive pillars and first semiconductor die;
• and
• removing a portion of a back-side of the substrate, opposite the top-side of the substrate, to expose the conductive via.

A semiconductor device, comprising:

• a substrate;
• a conductive via formed vertically through a top-side of the substrate;
• a first integrated passive device (IPD) formed over the substrate;
• a plurality of conductive pillars formed over the first IPD;
• a first semiconductor die mounted over the substrate;
• an encapsulant formed around the first conductive pillars and first semiconductor die;
• and
• a second semiconductor die mounted to a back-side of the substrate, the second semiconductor die being electrically connected to the first IPD and first semiconductor die through the conductive via.