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US 2010/0140755 A1Published application
Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys
AssigneeTranslucent, Inc.
InventorPetar Atanackovic
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Abstract
Fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides is disclosed. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors. The presented growth techniques and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
Claims9
A solid state device comprising a structure comprising:
- a first single crystal semiconductor layer;
- a second semiconductor layer;
- and
- a rare earth layer separating the first layer from the second layer wherein the rare earth layer comprises a composition chosen from:
- [Q]m[RE1]n or [RE1]u[RE2]v[J1]x[J2]y;
- wherein [RE] is chosen from a rare earth;
- [Q] is chosen from silicon, germanium and SiGe mixtures;
- [J] is chosen from Oxygen, Nitrogen and Phosphorus such that the rare earth layer is polycrystalline or single crystal and 0<m, n, u, x≦5 and 0≦v, y≦5.
5 more elements
A semiconductor device comprising:
- a first semiconductor layer comprising a first surface;
- and
- a plurality of layers wherein one layer is a second semiconductor layer chosen from silicon, or germanium or mixtures thereof, and one layer comprises one or more species of rare-earth metals ions and one constituent chosen from a crystal growth modifier or an iso-electronic center and is in contact with the first surface.
A solid state device comprising a structure comprising:
- a first single crystal semiconductor layer;
- a second semiconductor layer;
- and
- a rare earth layer separating the first layer from the second layer wherein the rare earth layer comprises a composition chosen from:
- [Q]m[RE1]u[RE2]v[J1]x[J2]y;
- wherein [RE] is chosen from a rare earth;
- [Q] is chosen from silicon, germanium and SiGe mixtures;
- [J] is chosen from Oxygen, Nitrogen and Phosphorus such that the rare earth layer is polycrystalline or single crystal and 0<m, u, v, x≦5 and 0≦y≦5.
5 more elements
Dependencies are inferred from the claim text.