Back to results
US 2010/0140754 A1Published application
Film-forming material, silicon-containing insulating film and method for forming the same
AssigneeJsr Corporation
InventorsMasahiro Akiyama, Hisashi Nakagawa, Terukazu Kokubo
Life of this patent
Estimating the term…
Abstract
Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.)
Claims15
1-9. (canceled)
A silicon-containing film-forming material comprising an organosilane compound shown by the following general formula (1),
- wherein R1 to R4 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R5 represents an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, n represents an integer from 1 to 3, and m represents 1 or 2.
Dependencies are inferred from the claim text.