Semiconductor Device and Method of Forming Compliant Polymer Layer Between UBM and Conformal Dielectric Layer/RDL for Stress Relief

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over a top surface of the substrate;
• forming a first insulating layer over the substrate;
• forming a first dielectric layer over the first insulating layer;
• forming a second conductive layer over the first conductive layer and first dielectric layer;
• forming a second dielectric layer over the second conductive layer;
• depositing a polymer material over the second dielectric layer and second conductive layer;
• and
• forming a third conductive layer over the polymer material and second conductive layer, the third conductive layer being electrically connected to the second conductive layer.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over a top surface of the substrate;
• forming a first insulating layer over the substrate;
• forming a second conductive layer over the first conductive layer and first insulating layer;
• depositing a polymer material over the second conductive layer;
• and
• forming a third conductive layer over the second conductive layer, the third conductive layer being electrically connected to the second conductive layer.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer formed over a top surface of the substrate;
• a first insulating layer formed over the substrate;
• a first dielectric layer formed over the first insulating layer;
• a second conductive layer formed over the first conductive layer and first dielectric layer;
• a second dielectric layer formed over the second conductive layer;
• a polymer material deposited over the second dielectric layer and second conductive layer;
• and
• a third conductive layer formed over the polymer material and second conductive layer, the third conductive layer being electrically connected to the second conductive layer.