Semiconductor Device and Method of Forming Compact Coils for High Performance Filter

A method of forming a semiconductor device, comprising:

• providing a substrate;
• forming a first coil structure over the substrate, the first coil structure having a height greater than a skin current depth of the first coil structure;
• and
• forming a second coil structure over the substrate adjacent to the first coil structure, the second coil structure having a height greater than a skin current depth of the second coil structure.

A method of forming a semiconductor device, comprising:

• providing a substrate;
• forming a first coil structure over the substrate;
• and
• forming a second coil structure over the substrate adjacent to the first coil structure, wherein a first end of the first coil structure is placed 90 degrees from a first end of the second coil structure.

A semiconductor device, comprising:

• a substrate;
• a first coil structure formed over the substrate, the first coil structure having a height greater than a skin current depth of the first coil structure;
• and
• a second coil structure formed over the substrate adjacent to the first coil structure, the second coil structure having a height greater than a skin current depth of the second coil structure.