Semiconductor Device and Method of Embedding Integrated Passive Devices into the Package Electrically Interconnected Using Conductive Pillars

A method of manufacturing a semiconductor device, comprising:

• providing a temporary substrate;
• forming a first conductive layer over the temporary carrier;
• forming a plurality of conductive pillars over the first conductive layer;
• attaching an integrated passive device (IPD) to the first conductive layer between the conductive pillars;
• forming an encapsulant around the IPD and conductive pillars;
• forming a first insulation layer over the encapsulant and conductive pillars;
• forming a second conductive layer over the first insulating layer, the second conductive layer being electrically connected to the conductive pillars;
• and
• removing the sacrificial substrate.

A method of manufacturing a semiconductor device, comprising:

• providing a first interconnect structure;
• forming a plurality of conductive pillars over the first interconnect structure, the conductive pillars being electrically connected to the first interconnect structure;
• attaching an integrated passive device (IPD) to the first interconnect structure between the conductive pillars;
• and
• forming an encapsulant around the IPD and conductive pillars.

A semiconductor device, comprising:

• a first interconnect structure;
• a plurality of conductive pillars formed over the first interconnect structure, the conductive pillars being electrically connected to the first interconnect structure;
• an integrated passive device (IPD) disposed between the conductive pillars;
• and
• an encapsulant formed around the IPD and conductive pillars.