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US 2010/0140731 A1Published application
Image sensors including photoelectric converting units having multiple impurity regions
AssigneeSamsung Electronics Co., Ltd.
InventorYun-Ki Lee
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Abstract
An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
Claims5
An image sensor comprising:
- a semiconductor layer;
- and
- a plurality of unit pixels including red unit pixels, green unit pixels, and blue unit pixels in the semiconductor layer,
- wherein the red, green, and blue unit pixels are configured to accumulate charges corresponding to incident light having wavelengths in the red, green, and blue regions, respectively,
- each of the plurality of unit pixels includes a first impurity region of a first conductivity type that is configured to accumulate charges corresponding to incident light of a respective wavelength,
- the red unit pixels include second impurity regions of the first conductivity type below the first impurity regions, and
- the green unit pixels include third impurity regions of the first conductivity type below the first impurity regions and at about an equal depth as the second impurity regions, a width of the third impurity regions is smaller than a width of the second impurity regions.
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Dependencies are inferred from the claim text.