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US 2010/0140720 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDongyean Oh, Woon-kyung Lee
Life of this patent
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Abstract
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can include first transistors that include a first gate insulating layer having a first thickness and second transistors include a second gate insulating layer having a second thickness less than the first thickness. At least one of the transistors formed on the first or second gate insulating layers is directly over a dummy well.
Claims8
A semiconductor device comprising:
- first transistors comprising a first gate insulating layer having a first thickness;
- and
- second transistors comprising a second gate insulating layer having a second thickness less than the first thickness,
- wherein at least one of the transistors formed on the first or second gate insulating layers is directly over a dummy well.
1 more element
-11. (canceled)
Dependencies are inferred from the claim text.