Transistor-type protection device and semiconductor integrated circuit
AssigneeSony Corporation
InventorsTsutomu IMOTO, Toshio KOBAYASHI
Life of this patent
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Abstract
A transistor-type protection device includes: a semiconductor substrate; a well of a first-conductivity-type formed in the semiconductor substrate; a source region of a second-conductivity-type formed in the well; a gate electrode formed on the well via a gate insulating film at one side of the source region; plural drain regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from a well part immediately below the gate electrode film; and a resistive connection part connecting between the plural drain regions with a predetermined electric resistance.
Claims12
A transistor-type protection device comprising:
- a semiconductor substrate;
- a well of a first-conductivity-type formed in the semiconductor substrate;
- a source region of a second-conductivity-type formed in the well;
- a gate electrode formed on the well via a gate insulating film at one side of the source region;
- plural drain regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from a well part immediately below the gate electrode film;
- and
- a resistive connection part connecting between the plural drain regions with a predetermined electric resistance.
A transistor-type protection device comprising:
- a semiconductor substrate;
- a base region of a first-conductivity-type formed in the semiconductor substrate;
- an emitter region of a second-conductivity-type formed within the base region;
- plural collector regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from the emitter region;
- and
- a resistive connection part connecting between the plural collector regions with a predetermined electric resistance.
A semiconductor integrated circuit comprising:
- a circuit connected to first wiring and second wiring;
- and
- a transistor-type protection device turned on when a potential difference between the first wiring and the second wiring becomes equal to or more than a fixed value and protecting the circuit,
- the transistor-type protection device including
- a semiconductor substrate,
- a well of a first-conductivity-type formed in the semiconductor substrate,
- a source region of a second-conductivity-type formed in the well,
- a gate electrode formed on the well via a gate insulating film at one side of the source region,
- plural drain regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from a well part immediately below the gate electrode film;
- and
- a resistive connection part connecting between the plural drain regions with a predetermined electric resistance.
A semiconductor integrated circuit comprising:
- a circuit connected to first wiring and second wiring;
- and
- a transistor-type protection device turned on when a potential difference between the first wiring and the second wiring becomes equal to or more than a fixed value and protecting the circuit,
- the transistor-type protection device including
- a semiconductor substrate,
- a base region of a first-conductivity-type formed in the semiconductor substrate,
- an emitter region of a second-conductivity-type formed within the base region,
- plural collector regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from the emitter region;
- and
- a resistive connection part connecting between the plural collector regions with a predetermined electric resistance.
Dependencies are inferred from the claim text.