Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device comprising the steps of:

• (a) forming a gate insulating film on a main surface of a semiconductor substrate;
• (b) forming a first gate electrode of an N-type MIS transistor and a second gate electrode of a P-type MIS transistor on the gate insulating film;
• (c) after the step (b), forming an N-type low-doped layer in the semiconductor substrate in a vicinity of the first gate electrode by implanting an N-type impurity to the semiconductor substrate in a region where the N-type MIS transistor is formed with using the first gate electrode as a mask, and forming a P-type low-doped layer in the semiconductor substrate in a vicinity of the second gate electrode by implanting a P-type impurity to the semiconductor substrate in a region where the P-type MIS transistor is formed with using the second gate electrode as a mask;
• (d) after the step (c), forming an insulating film on side surfaces of each of the first and second gate electrodes;
• (e) forming source/drain regions of the N-type MIS transistor in the semiconductor substrate in a vicinity of the first gate electrode by implanting an N-type impurity and N (nitrogen) to the semiconductor substrate in the region where the N-type MIS transistor is formed with using the first gate electrode and the insulating film as a mask;
• and
• (f) forming source/drain regions of the P-type MIS transistor in the semiconductor substrate in a vicinity of the second gate electrode by implanting a P-type impurity and Ar (argon) to the semiconductor substrate in the region where the P-type MIS transistor is formed with using the second gate electrode and the insulating film as a mask.