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US 2010/0140709 A1Published application
Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
AssigneeMicron Technology, Inc.
InventorChandra V. Mouli
Life of this patent
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Abstract
A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
Claims25
A semiconductor device, comprising:
- a base substrate;
- an energy barrier formed on the base substrate;
- and
- at least one transistor formed over the base substrate, the at least one transistor including a channel located adjacent to the energy barrier.
1 more element
A fin field effect transistor of a semiconductor device, comprising:
- a fin including:
- a base comprising an energy barrier;
- a top comprising semiconductor material on the base;
- a gate dielectric coating at least a portion of the fin;
- and
- a gate electrode on the gate dielectric.
3 more elements
A method for fabricating a semiconductor device, comprising:
- forming an energy barrier on a base substrate;
- forming a channel of a transistor on the energy barrier;
- and
- fabricating a remainder of the transistor.
1 more element
A method for increasing a duration that a charge is stored within a channel of a transistor, comprising:
- forming an energy barrier adjacent to a channel of a transistor;
- and
- applying a charge to the channel.
Dependencies are inferred from the claim text.