Metal-Gated MOSFET Devices Having Scaled Gate Stack Thickness
AssigneeInternational Business Machines Corporation
InventorsAmlan Majumdar, Renee Tong Mo, Zhibin Ren, Jeffrey Sleight
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Abstract
Metal-oxide semiconductor field effect transistor (MOSFET) devices having metal gate stacks and techniques for improving performance thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate having a buried oxide layer at least a portion of which is configured to serve as a primary background oxygen getterer of the device; and a gate stack separated from the substrate by an interfacial oxide layer. The gate stack comprises a high-K layer over the interfacial oxide layer; and a metal gate layer over the high-K layer.
Claims18
A metal-oxide semiconductor device comprising:
- a substrate having a buried oxide layer at least a portion of which is configured to serve as a primary background oxygen getterer of the device;
- a gate stack separated from the substrate by an interfacial oxide layer, the gate stack comprising:
- a high-K layer over the interfacial oxide layer;
- and
- a metal gate layer over the high-K layer.
Dependencies are inferred from the claim text.