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US 2010/0140705 A1Published application
Dielectric structure having lower-k and higher-k materials
AssigneeXerox Corporation
InventorsYiliang Wu, Paul F. Smith
Life of this patent
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Abstract
An electronic device including in any sequence: (a) a semiconductor layer; and (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
Claims20
An electronic device comprising in any sequence:
- (a) a semiconductor layer;
- and
- (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
An electronic device comprising in any sequence:
- (a) an organic semiconductor layer;
- and
- (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is at a concentration ranging from about 40% to 0% and the higher-k dielectric polymer is at a concentration ranging from about 60% to 100% of the total weight of the lower-k and the higher-k dielectric polymers in a region of the dielectric structure closest to the semiconductor layer.
A thin film transistor comprising in any sequence:
- (a) a semiconductor layer;
- and
- (b) a gate dielectric comprising a lower-k dielectric polymer-majority/higher-k dielectric polymer-minority first phase and a higher-k dielectric polymer-majority/lower-k dielectric polymer-minority second phase, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
Dependencies are inferred from the claim text.