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US 2010/0140703 A1Published application
Semiconductor Device and Method for Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorChoul Joo Ko
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes a substrate having a first conductor-type, a buried layer of a second conductor-type on the substrate, a drain, and a first guard-ring on one side of the drain, a second guard-ring on one side of the first guard-ring, and a third guard-ring on one side of the second guard-ring.
Claims19
A semiconductor device comprising:
- a substrate having a first conductor-type;
- a buried layer having a second conductor-type on or over the substrate;
- a drain;
- and
- a first guard-ring on one side of the drain, a second guard-ring on one side of the first guard-ring, and a third guard-ring on one side of the second guard-ring.
2 more elements
A semiconductor device comprising:
- a substrate having a first conductor-type, an active region and a field region;
- a second conductor-type deep well in the substrate;
- a first conductor-type body in the deep well;
- a gate electrode on or over the active region;
- a second conductor-type drain region in a second conductor-type source region in the body and in the deep well;
- a first guard well in the second conductor-type deep well and having first conductor-type impurities therein;
- a second guard well in the deep well and having second conductor-type impurities therein;
- and
- a third guard well in the deep well and having second conductor-type impurities therein.
6 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a second conductor-type deep well in a first conductor-type substrate;
- forming a first conductor-type body in the deep well, a second conductor-type drain region, a first guard well having the first conductor-type, a second guard well having the second conductor-type, and a third guard well having the second conductor-type;
- forming a field oxide layer on the substrate;
- forming a gate electrode;
- forming a first photoresist pattern on the substrate and injecting second conductor-type impurities;
- and
- forming a second photoresist pattern on the semiconductor substrate and injecting first conductor-type impurities.
4 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a second conductor-type deep well on a first conductor-type substrate;
- forming a first conductor-type body in the deep well, a second conductor-type drain region, a first guard well having the first conductor-type, a second guard well having the second conductor-type, and a third guard well of having the second conductor-type;
- forming a field oxide layer on the substrate;
- forming a gate electrode;
- forming a first photoresist pattern on the substrate and injecting first conductor-type impurities, forming a first conductor-type impurity layer in the body and a first conductor-type impurity region in the first guard well;
- and
- forming a second photoresist pattern on the substrate and injecting second conductor-type impurities, thereby forming a second conductor-type source region in the body, a second conductor-type drain region in the shallow well, and a second conductor-type impurity region in the second guard well.
4 more elements
Dependencies are inferred from the claim text.