Semiconductor device and method for manufacturing the same
OwnerSang-Yong Leeinventor
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include a substrate and a laterally diffused metal oxide semiconductor (LDMOS) device. A semiconductor device may include a second conductive type well formed on and/or over a substrate. An LDMOS device may include a drain disposed on and/or over a substrate. An LDMOS device may include a field oxide at one side of a drain, a first conductive type impurity layer on and/or over a substrate, under a field oxide, and/or a second conductive type impurity layer between a first conductive type impurity layer and a field oxide.
Claims20
An apparatus comprising:
- a second conductive type well over a substrate;
- and
- a laterally diffused metal oxide semiconductor device comprising a drain over said substrate, a field oxide at one side of the drain, a first conductive type impurity layer over the substrate and under the drain, and a second conductive type impurity layer between said first conductive type impurity layer and said field oxide.
An apparatus comprising:
- a second conductive type well over a substrate;
- a gate electrode over the substrate;
- a first conductive type body comprising a source region at one side of said gate electrode;
- a drain region at an opposite side of said gate electrode;
- a field oxide between said source region and said drain region;
- a first conductive type top region over said second conductive type well under said field oxide;
- and
- a second conductive type top region between said field oxide and said first conductive type top region.
A method comprising:
- forming a second conductive type well over a substrate;
- forming at least one of a first conductive type top region and a second conductive type top region by implanting at least one of first conductive type impurities and second conductive type impurities over said second conductive type well under a region where a field oxide is to be formed;
- and
- forming at least one of a first conductive type body and a field oxide over said second conductive type well.
The method of 17, wherein forming said at least one first conductive type top region and second conductive type top region comprises:
- coating a photoresist pattern to open a region where said field oxide is to be formed;
- and
- performing a plurality of ion implantation processes using said photoresist pattern as an ion implantation mask.
Dependencies are inferred from the claim text.