Semiconductor device and method for manufacturing the same
OwnerKwang-Young Koinventor
Life of this patent
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Abstract
A semiconductor device includes a logic device and a LDMOS device. The logic device including a first well of a first conductive type formed in the substrate, a first source region and a first drain region formed in the first well, and a first gate electrode formed over the first well. The LDMOS device including a deep well of the first conductive type formed in a second substrate, a body region of a second conductive type and a second well of a first conductive type formed in the deep well, a second source region formed in the body region, a second drain region formed in the second well, a second gate electrode formed over the second substrate, and an impurity layer of the first conductive type formed in the second substrate under the second gate electrode.
Claims20
A semiconductor device comprising:
- a substrate;
- a first well having a first conductive type formed in the substrate;
- and
- an LDMOS device including a gate electrode formed on the substrate, a source region formed in the substrate at one side of the gate electrode, a drain region formed in the substrate at another side of the gate electrode, and an impurity layer having the first conductive type formed in the substrate under the gate electrode.
A semiconductor device comprising:
- a first substrate;
- a second substrate;
- a logic device including a first well of a first conductive type formed in the substrate, a first source region and a first drain region formed in the first well, and a first gate electrode formed over the first well;
- and
- a LDMOS device including a deep well of the first conductive type formed in a second substrate, a body region of a second conductive type and a second well of a first conductive type formed in the deep well, a second source region formed in the body region, a second drain region formed in the second well, a second gate electrode formed over the second substrate, and an impurity layer of the first conductive type formed in the second substrate under the second gate electrode.
A method for manufacturing a semiconductor device comprising:
- forming a deep well of a first conductive type in a substrate of a second conductive type;
- forming a body region of the first conductive type in the deep well;
- forming a well of the first conductive type in the deep well;
- forming an impurity layer of the first conductive type and a well of the first conductive type in the substrate at one side of the body region;
- forming a gate electrode over the substrate corresponding to a region in which the impurity layer is formed;
- and then
- forming a source region in the body region and a drain region in the well.
Dependencies are inferred from the claim text.