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US 2010/0140697 A1Published application
Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics
AssigneeFairchild Semiconductor Corporation
InventorsJoseph A. Yedinak, Dean E. Probst, Ashok Challa, Daniel Calafut
Life of this patent
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Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Claims18
A semiconductor device comprising:
- a first trench extending into a semiconductor region;
- a first dielectric layer lining opposing sidewalls of the first trench, the first dielectric layer being thicker along one of the opposing sidewalls than along the other;
- a gate electrode disposed in the first trench;
- and
- a plurality of trenches extending into the semiconductor region, each of the plurality of trenches having opposing sidewalls lined with a dielectric layer and a gate electrode disposed between the sidewalls, the dielectric layer of each trench having the same thickness along the portions of both the opposing sidewalls that face the gate electrode.
2 more elements
A semiconductor device comprising:
- a plurality of parallel trenches extending in a semiconductor region, each trench having a shield electrode and a gate electrode vertically stacked therein, the gate and shield electrodes being insulated from each other;
- and
- wherein the plurality of parallel trenches are bounded on two sides by two end trenches that extend in parallel with the plurality of trenches but do not encircle the plurality of the trenches.
A semiconductor device disposed on a semiconductor die, the semiconductor device comprising:
- a semiconductor layer disposed on the die and having a first surface and a second surface;
- a first trench disposed at the first surface of the semiconductor layer and having a first end facing a first edge of the semiconductor die, and a second end;
- a second trench disposed at the first surface of the semiconductor layer and having a first end adjacent to the first end of the first trench and facing the first edge of the semiconductor die, and a second end;
- a gate electrode disposed in the first and second trenches;
- and
- a first portion of the semiconductor layer disposed between the first ends of the first and second trenches and the first edge of the semiconductor die;
- and
- wherein the first portion does not have a perpendicular termination trench disposed at the first surface of the semiconductor layer.
5 more elements
A trench shielded Schottky barrier rectifier semiconductor device comprising:
- a semiconductor layer disposed on the die and having a first surface and a second surface;
- a first trench disposed at the first surface of the semiconductor layer and having a first end facing a first edge of the semiconductor die, and a second end;
- a second trench disposed at the first surface of the semiconductor layer and having a first end adjacent to the first end of the first trench and facing the first edge of the semiconductor die, and a second end;
- a shield electrode disposed in the first and second trenches;
- and
- a first portion of the semiconductor layer disposed between the first ends of the first and second trenches and the first edge of the semiconductor die;
- and
- a Schottky barrier metal disposed between the first and second trenches, and between the trench ends;
- and
- wherein the first portion does not have a perpendicular termination trench disposed at the first surface of the semiconductor layer.
7 more elements
18-76. (canceled)
Dependencies are inferred from the claim text.